| PART |
Description |
Maker |
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HI1-0518-5 HI1-0518-8 HI3-0518-5 HI-518 FN3147 |
8-Channel/Differential 4-Channel,CMOS high speed andlog multiplexer 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP18
RESISTOR POWER 125 OHM 8W 5% 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP18
8-Channel/Differential 4-Channel/ CMOS High Speed Analog Multiplexer
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
8-Channel/Differential 4-Channel, CMOS High Speed Analog Multiplexer
8-Channel/Differential 4-Channel CMOS High Speed Analog Multiplexer
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| KS88C6108 KS88C6116 KS88P6116 |
SAM8 family of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-progr
|
Samsung semiconductor
|
| KS88P2148 KS88C2148 |
KS88 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-progr
|
Samsung semiconductor
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT803 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| APT8020JFLL |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
MICROSEMI[Microsemi Corporation]
|
| MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| 2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
